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| PD - 95477 IRF9953PBF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l HEXFET(R) Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.25 6 5 Top View Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range -30 20 -2.3 -1.8 -10 1.6 2.0 1.3 57 -1.3 0.20 -5.0 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 Units C/W 7/16/04 IRF9953PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 -1.0 Typ. 0.015 0.165 0.290 -2.4 6.1 1.7 1.1 9.7 14 20 6.9 190 120 61 Max. Units Conditions V V GS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.250 V GS = 10V, ID = -1.0A 0.400 V GS = 4.5V, ID = -0.50A V V DS = V GS, ID = -250A S V DS = -15V, I D = -2.3A -2.0 V DS = 24V, VGS = 0V A -25 V DS = 24V, VGS = 0V, TJ = 55C 100 V GS = -20V nA -100 V GS = 20V 12 I D = -2.3A 3.4 nC V DS = -10V 2.2 V GS = -10V, See Fig. 10 19 V DD = -10V 28 I D = -1.0A ns 40 R G = 6.0 14 R D = 10 V GS = 0V pF V DS = -15V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 1.3 A 16 1.2 54 62 V ns nC 0.82 27 31 Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25C, IS = -1.25A, VGS = 0V TJ = 25C, IF = -1.25A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by Starting TJ = 25C, L = 67mH RG = 25, IAS = -1.3A. max. junction temperature. ( See fig. 11 ) ISD -1.3A, di/dt -92A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF9953PBF 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 10 1 1 -3.0V -3.0V 0.1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 0.1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -ID , Drain-to-Source Current (A) 10 -ISD , Reverse Drain Current (A) 10 TJ = 25C T J = 150C 1 TJ = 150C TJ = 25C 1 0.1 3.0 4.0 5.0 VDS = -10V 20s PULSE WIDTH 6.0 7.0 8.0 A 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF9953PBF 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -1.0A R DS(on) , Drain-to-Source On Resistance ( ) 2.5 2.0 1.5 1.5 1.0 VGS = -4.5V 1.0 0.5 0.5 VGS = -10V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( C) -I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current R DS(on) , Drain-to-Source On Resistance ( ) 0.80 150 EAS , Single Pulse Avalanche Energy (mJ) 0.60 120 ID -0.58A -1.0A BOTTOM -1.3A TOP 90 0.40 I D = -2.3A 60 0.20 30 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 150 -V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF9953PBF 400 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = -2.3A VDS =-10V 16 C, Capacitance (pF) 300 Ciss Coss 200 12 8 100 Crss 4 0 1 10 100 A 0 0 2 4 6 8 10 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9953PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 IRF9953PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 |
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